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In this study, bismuth-doped zinc selenide ZnSe/Bi single crystals were deposited on conducting glass substrates to study the effects of single crystals’ molar concentration on a variety of properties. These properties were characterised using SEM, EDX, XRD, and UV–vis. The various characterisations were carried out to determine the material’s morphological, elemental, structural, optical, and electrical characteristics. The ZnSe material’s diffraction peaks were found at (1 1 1), (2 0 1), and (2 1 1), while the ZnSe/Bi material’s peaks were found at (2 2 0), (2 2 1), and (3 0 0), which correspond to the angles (26.12°), (31.00°), (37.02°) (51.73°), (62.67°), and (65.83°), respectively. The material showed a smaller nano-grain size that covered the entire substrate, indicating uniform deposition. A band gap energy of 1.55 to 1.72 eV was obtained.

Impact of bismuth as dopant on ZnSe material syntheses for photovoltaic application