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This research article reports the effect of absorber layer thickness on the photovoltaic characteristics of the dip-successive ionic layer adsorption and reaction (SILAR) synthesised bismuth oxyiodide (BiOI) solid-state cell. The study result clarifies that, as the cycle number of the dip-SILAR process increases from 10 to 30, the structural and morphological improvement occurs. That causes the enhancement of BiOI absorber layer compactness and continuity; due to that, the photovoltaic properties reach their maximum value. However, as the cycle increased to 35 cycles, the photovoltaic performance decreased. It was also found that the optimum annealing temperature is 100°C. At optimised thickness and post-annealing temperature conditions, the hole transport layer (P3HT) has been introduced. As a result, short-circuit current, fill-factor, and power conversion efficiency were enhanced by 25.5%, 23.1%, and 17.4%, respectively. The stability of BiOI solid-state cell with and without P3HT are also presented.

Effect of growth parameters on BiOI based solid-state solar cells prepared by SILAR