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Copper-Zinc-Tin-Sulphide (CZTS)/n-Si and Copper-Indium-Gallium-Selenide (CIGS)/n-Si hetero-junction solar cells have been manufactured using Pulse Laser Deposition (PLD) technique. Properties of both CZTS&amp;CIGS ultrathin films have been produced in comparable thicknesses, analysed and compared to each other. CIGS ultrathin film has smaller main crystalline size but absorbs more light compared to CZTS.characteristics of CZTS/n-Si and CIGS/n-Si hetero-junctions have been obtained in the darkness and under light conditions. The ideality factor, barrier height, serial resistances of these hetero-junctions have been calculated by the traditionaland Cheung-Cheung methods for the darkness. Although the serial resistance of CZTS hetero-junction has been found to be very low compared to CIGS hetero-junction, the efficiency and photocurrent of CZTS solar cell have been higher compared to those of CIGS solar cell. The photoelectric outputs of CZTS/n-Si and CIGS/n-Si cells have been studied using SCAPS-1D programme. We have found/concluded difference incharacteristics between CZTS/n-Si and CIGS/n-Si structures.

Comparison of electrical and photovoltaic parameters of the hetero-junction solar cells based on CZTS and CIGS ultrathin films