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This paper reports the structural, dielectric, and electrical properties of Zr (10%) substituted bismuth titanate with the chemical formula Bi4Ti2.9Zr0.1O12. The material possesses a distorted orthorhombic structure and space group of B2cb at room temperature. The Zr-substituted bismuth titanate has a high Curie temperature and good dielectric constant. In any case, the dielectric constant of the Zr doped ceramic is higher than that of pure bismuth titanate. The study of impedance properties revealed the relaxation process, negative temperature coefficient of resistance behavior, grain and grain boundary formation, and the space charge effect in the high-frequency region of the material. The AC conductivity study explained the activation of charge carriers and the associated hopping mechanisms. A smaller activation energy (E a ) is observed at the low temperatures than in the high-temperature range. The ferroelectric property is confirmed through the P ∼ E hysteresis loop of the material at room temperature.

Structural and Electrical Transport Features of Bi 4 Ti 2.9 Zr 0.1 O 12