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With the increase in scaling of transistors in nanometer regime, various short channel effects are emerging in transistor operation that are required to resolved while putting conventional transistor to any practical application. Various device modifications and structure improvizations have been made and reported by the researchers to overcome the short channel effects and replace the conventional MOSFET with an optimized device in practical circuit applications. The device structure proposed in this work incorporates the negative capacitance phenomenon for making subthreshold swing steeper and enhancing current ratio of TFET. Further the device dimensions are being optimized to get improvised characteristics and best results are obtained at 3 nm thick BaTiO 3  Ferroelectric material for making negative capacitance gate stack. In this paper, negative capacitance TFET so formed is used for implementing inverter and 1 T DRAM cell. Results obtained shows that the inverter and DRAM cell operates at a very lower supply voltage and are more suitable for low power applications as compared to conventional circuits.

Impact of Ferroelectric Material BaTiO 3 on Negative Capacitance TFET Device and Its Circuit Application