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Microstructures of cubic AlN on MgO (001) with using two-step growth of cubic GaN buffer layer grown by plasma assist molecular beam epitaxy (PAMBE) technique have been investigated by bright- and dark field cross section transmission electron microscopy (TEM) along [100] zone axis. The Pyramid shape contrast which has been proposed the characteristic of stacking faults defect was observed in cubic AlN film. Pyramid facet contrast correspond with (002) plane and (111) plane with ∼45 °  projection along [100] direction. The 3D graphic model can explain the Pyramid contrast structure defect as the same Pyramid contrast structure observed in [110] direction with the angle between (002) and (111) of cubic structure found ∼54.7 °  by the literature.

integrated ferroelectrics

TEM Investigation of Stacking Faults Defect Taken Along [100] Zone Axis of Cubic AlN on MgO (001) Substrate with Using 2-Step Growth Cubic GaN Buffer Layer by PAMBE