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In this work, 80-nm Bi 3.15 Nd 0.85 Ti 3 O 12  thin films with different annealing temperature have been successfully fabricated on  p -type silicon substrates by sol-gel method. The effect of annealing temperature on the microstructure, dielectric properties, and energy-storage performances of the thin films were investigated in detail. The prepared films at 750 °C had a layered perovskite structure with an excellent crystalline morphology, featuring a high dielectric constant of 43.8 and a low dielectric loss &lt; 2% at 1 kHz, which lead the significantly improvement of breakdown strength to increase the energy storage properties. The maximum recoverable energy density of 4.3 J/cm 3  with an efficiency of 70.7% under the electric field of 1.90 MV/cm has been obtained for the Bi 3.15 Nd 0.85 Ti 3 O 12  film capacitors at 750 °C. These properties indicate that Bi 3.15 Nd 0.85 Ti 3 O 12  system is a promising environmentally friendly lead-free ferroelectric.

Temperature Dependence of Structure, Dielectric and Energy Storage Properties in Bi 3.15 Nd 0.85 Ti 3 O 12 Thin Films