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ST- x ZS ceramics were prepared by solid-state sintering and have high temperature dielectric relaxation behavior at the temperature ranges of 300 °C–500 °C. We explore the origin of high temperature dielectric relaxation behavior of samples by activation energy calculation, XPS energy spectrum analysis and oxygen treatment experiment. We get a conclusion that the dielectric relaxation of pure ST ceramics comes from the migration of Vo. However, with the increase of ZS content, the dielectric relaxation related to Vo migration is gradually transformed into the influence of Ti 4+  ion polarization, and the possible causes of relaxation behavior dependence are analyzed in detail.

High Temperature Dielectric Relaxation Properties of SrTiO 3 -Zn 2 SnO 4 Composite Ceramics