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Ce-doped Bi 4-X Ce x Ti 3 O 12  (BCT) films were prepared by the sol-gel method and the heat treatment process different from traditional ones. The experimental results show that the Bi 4 Ti 3 O 12  (BTO) films still exhibit a single-phase bismuth-layered structure and can effectively improve the ferroelectric properties under the doping of Ce 3+ , and the maximum residual polarization intensity is 1.23μC/cm 2  when the doping amount is  x  = 1.35. At the same time, the heat treatment process different from the traditional process was used to explore the influence of the preparation process on the surface morphology and ferroelectric properties of the films.

Preparation and Properties of Ce-Doped Bi 4-x Ce x Ti 3 O 12 Thin Films