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Single-event double transients (SEDT) measurement in a designed 65-nm bulk CMOS inverter chain is performed under heavy-ion irradiation and pulsed laser irradiation. An SEDT event is observed under Ta ions irradiation, and it is found to result from the charge sharing between electrically connected inverters by TCAD simulation. Laser experimental results show that SEDT generation increases with the laser pulse energy as well as the supply voltage of the inverter chain. The pulse width distributions of SEDT for the laser irradiations of different rows demonstrate that SEDT events generated far from the chain output are modified by the pulse broadening during propagation: the first and second single-event transients are broadened, but the temporal differences are shrunk. The difference of SEDT cross-sections between the laser irradiations of different rows suggests that SEDT may be mitigated by controlling propagation.

Heavy-ion and pulsed laser induced single-event double transients in nanometer inverter chain