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Analysis luminescence performance of optical devices via photoluminescence, PL, is important in its applications, especial the effect of radiation on PL. In this paper, the PL spectra of In 0.53 Ga 0.47 As/InP multilayer quantum wells and In .22 Ga .78 As/GaAs quantum well were measured before and after electron radiation, firstly. Then, the wavelength dependence of the PL intensity was fitted using an asymmetric peak model and the theoretical curve obtained shows reasonable agreement with experimental data well. The total number of emission photons was yielded by the integral of the asymmetric peak model over wavelength. The significance benefit is that the quantitative relationship between the total number of emission photons and layer number of In .53 Ga0 .47 As/InP multilayer quantum were found. Moreover, the relationship between radiation fluency and total number of emission photons from PL of In .22 Ga .78 As/GaAs quantum well was mathematical obtained as major findings. As a result, the combination of an asymmetric peak model with its integral can largely expand the quantitatively control the influence of radiation on PL spectrum of functional materials.

radiation effects and defects in solids

Quantitative comprehension the impact of MeV electron radiation and structure on luminescence performance of In .53 Ga0 .47 As/InP and In .22 Ga .78 As/GaAs quantum well