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The gamma radiation-induced defects in radiation intolerant and radiation tolerant Si/SiO 2  were observed by electron spin resonance (ESR). The P b  and È defects appeared in radiation-intolerant Si/SiO 2  after radiation, but only P b  defects appeared in radiation-tolerant Si/SiO 2  before and after radiation. The experimental results showed that these defects were correlated with the way of oxidation, the dosage of  60 Co radiation and the electrical bias field during radiation. The higher the radiation dosage, the higher the defect concentration. A quantitative relationship was found between defect concentration and radiation dosage. Besides, the △B (peak to peak) of P b  and È indicated that P b  is the defect with a slow electron spin relaxation time, while È is the defect with a fast electron spin relaxation time. Finally, the experimental results are explained qualitatively.

radiation effects and defects in solids

Observation of gamma radiation-induced defects in radiation-intolerant and radiation-tolerant Si/SiO 2  by electron spins resonance and quantitative interpretation