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The total ionizing dose response of 22nm bulk silicon nFinFETs with different bias conditions is investigated using  60 Co-rays. The experimental results show that constant voltage stress (CVS) has an important effect on the electrical parameters of the devices. After the CVS experiment, the threshold voltage of the device shifts positively and the on-state current decreases. The threshold voltage of devices irradiated under ON bias and ON bias after CVS shifts positively, and the ON bias device has shown large degradation. The threshold voltages of devices irradiated under ALL0 bias and TG bias shift negatively. The on-state current of the device increases with the accumulation of irradiation dose. There is no significant change in the subthreshold swing andnoise power spectrum of the device after irradiation, indicating that the irradiation produces fewer interface traps and border traps.

Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs