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A theoretical formulation followed by numerical analysis is carried out to study the hot carrier effects (HCEs) on Brillouin amplification in A III B V  and A II B VI  semiconductors. The threshold condition for the onset of Brillouin amplification and the parameters characterizing Brillouin amplification of the Brillouin cell are estimated. Numerical analysis is made for three different Brillouin cells at illuminated by a pulsed CO 2  laser. HCEs of intense pump beam modifies the momentum transfer collision frequency of carriers and consequently the nonlinearity of the Brillouin medium, which in turn (i) lowers the threshold intensity, (ii) enhances the parameters characterizing Brillouin amplification, (iii) shifts the enhanced Brillouin gain spectrum towards smaller values of magnetic field, and (iv) widens the range of magnetic field at which peak of Brillouin gain spectrum (around resonance) occurs. The incorporation of HCEs in the analysis validate the selection of appropriate Brillouin medium for the fabrication of efficient Brillouin amplifiers.

Hot carrier effects on Brillouin amplification in A III B V and A II B VI semiconductors