Open AccessA Complication of Negative Resistance Circuits Generated by Two Novel Algorithms
Author(s) -
Umesh Kumar
Publication year - 2001
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1080/08827510213495
Subject(s) - jfet , diode , electronic circuit , algorithm , power (physics) , mosfet , materials science , negative resistance , optoelectronics , electrical engineering , electronic engineering , computer science , engineering , physics , voltage , field effect transistor , transistor , quantum mechanics
There are two algorithms to generate a negative-resistance device which exhibits either a type-N shaped V-1 characteristic similar to a tunnel diode, or a type-S shaped V-1 characteristic similar to a four layered pnpn diode. We present here a selection of these circuits using bipolar, JFET or MOSFET or their combinations
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