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In this article, we examined the electromechanical behavior of Sn-substituted Lead Bismuth Zirconate Titanate thin films (PBZST thin films). Using the pulsed laser deposition technique (PLD), the thin film growth parameters of bismuth-doped PZST close to MPB were adjusted by varying the ∼(Zr, Sn)/Ti ratios. Thin films (∼250 nm) with the stoichiometric formula Pb 0.985 Bi 0.01 (Zr 0.7 Sn 0.3 )xTi 1 –xO 3 , ( x  = 0.935, 0.940, 0.945, and 0.950) were grown on a Pt/TiO 2 /SiO 2 /Si substrate using PLD technique at optimized conditions. P-E loop confirms that MPB is near  x  = 0.945, and further PFM measurements also confirmed the same. Analyzing the PFM phase and amplitude hysteresis loops, local piezo-electric coefficient and remnant strain values were computed as d 33  = 330 pm/V and 0.33 at the MPB composition ( x  = 0.945).

Optimization of MPB for Sn Substituted Lead Bismuth Zirconate Titanate Thin Films by the Electromechanical Behavior Related to Energy Storage Capacity