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In this work, the impact of high-K and gate-to-drain spacing ( L gd) in InAs-based double-gate metal oxide semiconductor high-electron-mobility transistor (DG-MOS-HEMT) is analyzed for low-loss and high-frequency applications using 2D Sentaurus TCAD simulation. In this device, HfO 2  is utilized as the dielectric material and that offers a reduced leakage current. The device with small gate-to-drain spacing ( L gd) gives an exquisite device operation in enhancement mode (E-mode) operation with a positive threshold voltage ( V T) of 0.1223 V, the high drain current ( I ds,sat) of 1.38 mA/µm, transconductance ( g m) of 1.59 ms/µm, and sub-threshold slope ( SS ) of 75 mV/dec is achieved. These superior properties in this device show a high cut-off frequency ( f T) of 547 GHz and the maximum oscillation frequency of ( f max) of 740 GHz. The numerical device simulation results show that DG-MOS-HEMT with HfO 2  as dielectric offers a remarkable control of leakage current and makes it suitable for low-power, low-noise, and high-frequency applications.

Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications