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A comparison between cylindrical Gate All Around Nano Wire Field Effect Transistor (GAA NWFET) and a cylindrical Gate All Around Nano Wire Multi Bridge Channel Field Effect Transistor (GAA NWMBCFET) for a gate length of 35 and 5   nm has been carried out in this work. The Nanowire device was converted to a Nanowire MBCFET device by incorporating four channels in the cylindrical structure. The Current–Voltage (I-V) characteristics were thus plotted for both the devices where Silicon Carbide (SiC) is used as a material for source and drain regions for GAA NWMBCFET to increase the performance. The inclusion of a multi bridge channel and SiC in the device increase the current drive because of the Ultra-Thin Body (UTB) and vertically created stress. Due to the associative functionality of the multi bridge channel and SiC, the 5   nm gate length of Cylindrical GAA NWMBCFET achieves 75% of the drain current obtained in the 35   nm gate length Cylindrical GAA NWFET. Additionally, the electron mobility is evaluated, and Subthreshold Swing (SS) is also reported.

Performance Evaluation of Sub 5 nm GAA NWMBCFET using Silicon Carbide Source/Drain Material