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In this study, the Quad gate with gate oxide stack for 3 fins which is a vertically stacked device for the classical model and added the quantum mechanical effects to classical refers to the quantum model and both models have been explored for its analog performance. The analog and RF parameters for device performance like trans-conductance (gm), output conductance (gd), intrinsic gain (Av), and cut-off frequency (ft) are evaluated using a Visual TCAD tool. The simulation result reveals that a capacitance value for classical and quantum model (in the order of 10−19) which minimizes ON state delay and making the device suitable for fast switching applications. The AC analysis of the device demonstrates quite a high cut off frequency of 0.167 THz for classical model and 6.6 THz for Quantum model and a remarkable trans-conductance (Gm) of 23 µS. Furthermore, the P-type device response of the same has been studied extensively.

Density Gradient Study on Junctionless Stack Nano-Sheet with Stack Gate Oxide for Low Power Application