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In this paper, a simulation study to suppress the ambipolar current of the Schottky Barrier (SB) MOSFET is presented. In this work, a dual metal gate device structure is used. The gate of the device is composed of two different metals. The metal used at the source side gate is used region has higher work function, while the metal used at the drain side gate region has lower work function. To perform this study, the work function of the gate metal used at the source end is kept fixed. On the other hand, to choose the appropriate metal for gate at the drain end, different work function metal has been employed. Therefore, without affecting the on-state current of the device, ambipolar current has been suppressed. In addition, the performance of the proposed device has been compared with the conventional SB MOSFET. Simulation results show that the proposed device exhibits more than two-decade reduction in ambipolar current than the conventional double gate SB MOSFET.

Investigation of Dual Metal Gate Schottky Barrier MOSFET for Suppression of Ambipolar Current