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A comparative study is done on Si, 4H-SiC, Wz-GaN and InP based impact avalanche transit time (IMPATT) diodes operating at 94 GHz. A double-iterative simulation procedure is utilized to investigate the DC and small-signal features of the diodes from which corresponding avalanche response times and transit times are obtained. The studies exhibit that SiC and GaN diodes are potential sources for radiating high power at 94 GHz. It is also observed that SiC and GaN diodes are highly appropriate for mm-wave frequency bands due to shorter values of their avalanche response time. The power output for SiC IMPATT source is noticed as 47.61 W and for GaN IMPATT, the same is seen as 1.96 W; corresponding avalanche response times are found to be 2.42 × 10 −15  and 3.45 × 10 −16  s respectively.

Relative Study on MM-Wave Performance of Group IV-IV and Group III-V Materials Based IMPATT Sources