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Reconfigurable field effect transistors (RFETs) have opened a new avenue of research domain enabling multiple logical computations with the same hardware cost. So far, mostly, the same device capable of switching between n and p-type polarity has been realized as RFET. In this paper, applying multi-gate geometry, the doping is tuned electrostatically to operate the single device either as TFET or in a MOSFET mode depending upon the biases applied. A dual-source triple gate (DS-TG) FET is presented here as RFET with two gates over the source as program gates to switch the source polarity, while the control gate modulates the drain current. Based on the ATLAS simulated data, a high ON current of 10 −5 A/µm, the lower average subthreshold slope of 52 mV/decade, and improved I ON /I OFF  ratio of 10 12  are recorded with DS-TG TFET owing to its dual-source configuration and enhanced tunneling area. The impact of varying parameters, including channel doping concentration, distance between the source and drain, work function of gate metals, have been investigated on device electrostatics and its reconfigurable property to obtain the optimum device functionality. The performance of the present device is benchmarked against some of the concurrent TFET structures to establish its superiority for future circuit and system-level implementation.

Design and Optimization of a Dual-Source Triple Gate FET Using Electrostatically Induced Reconfigurable Property