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This paper systematically studies the reliability of non-uniformly doped Double Gate Junctionless transistor using ATLAS TCAD simulation. The reliability analysis is mainly based on the understanding of Band-To-Band-Tunneling (BTBT) current, lattice temperature, drain conductance and gate leakage current. Presented results show that higher source/drain work-function is beneficial in reducing tunneling current (1 × 10 −9  A to 4 × 10 −11  A @  Vgs  = −1 V) but eventually it will also degrade electrostatic current significantly (∼3 order). Source/Drain length has also been varied during optimization and it has been observed that, shorter source drain extension region degrades the device reliability ( i.e.  higher magnitude of tunneling current (7 × 10 −9  A @  Vgs  =   −1 V for  LS  =  LD  = 5 nm)). Different doping profile considered for performance assessment are: uniform, step ( i.e.  low–low–high and high–high–low  etc .) and different configurations of gaussian doping profile. Minimum variation in tunneling current with negative gate bias,  i.e.  ∼ 1 order has been seen from the device having uniform doping 10 19  cm −3  but at the cost of significantly high off-state current (2 × 10 −9  A @  Vgs  = 0 V) and tunneling current (2 × 10 −8  A @  Vgs  = −1 V). Thus, instead of using uniform doping, step type profile ( i.e.  Case A) is the better choice which results in lower tunneling current (1 × 10 −9  A @  Vgs  = −1 V), moderate lattice temperature (326) and better  Ion / Ioff  ratio (243 × 10 8 ). Device lattice temperature has also been controlled by using step A doping profile even at the higher operating temperatures due to lower Self Heating Effect.

Impact of Non-Uniform Doping on the Reliability of Double Gate JunctionLess Transistor: A Numerical Investigation