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In the present study, as a replacement for venomous CdCl 2  compound, MgF 2  activation is undertaken to explore the impact of ionic radii of halide on grain growth and physical properties of physical vapor-deposited CdSe films for absorber layer roles to solar cells. The MgF 2  activation is performed at 200°C, 300°C and 400°C. The XRD analysis shows that as-deposited CdSe films are polycrystalline in nature having mixed phases of cubic and hexagonal and phase transformation from (111)C to (103)H is observed for treated films. The energy band gap is varied in the 1.65–1.71 eV range and a stronger NBE PL peak is observed at ∼675 nm. The AFM analysis reveals hillock like topography, where hills height and distribution are varied with activation. The CdSe films activated by MgF 2  at 200°C could become potential absorber layers to solar cells due to their higher roughness, grain growth, absorbance and appropriate electrical properties.

Influence of air annealing temperature on physical properties of MgF 2 -treated CdSe thin films: phase transition and grain growth