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The dark current–voltage characteristicsof the fabricated Au/a-Si:H(n + )/SiGe(n) /c-Si(p)/Ag hetero-junction are investigated at temperatures ranging from 80 to 300 K to determine the carrier transport mechanisms. These characteristics showed a thermionic emission mechanism at low forward biasfollowed by a space charge limited current (SCLC) mechanism at high voltage. The junction parameters, namely, saturation current density, effective barrier height, rectification ratio and local ideality factor are determined. The barrier height value obtained from thecharacteristic, measured at high frequency ( f  = 1 MHz) and room temperature, is about 0.52 eV. This value is confirmed by the one extracted from the dark current–voltage characteristics. The effect of the a-Si:H(n + ) thin layer, which acts as a front surface field FSF, on thecharacteristic and the photovoltaic parameters is also investigated. An improvement in conversion efficiency of about 1% is obtained compared to the conventional structure without a-Si:H(n + ) region.

Current conduction mechanisms in Au/a-Si:H(n + )/SiGe(n)/c-Si(p)/Ag hetero-junction solar cells