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Bismuth layer-structured ferroelectric K 0.5 Bi 4.5 Ti 4 O 15  crystal was grown by original micro-pulling down method. The scanning electron microscope photos indicate the homogeneous distribution of the four elements of K, Bi, Ti and O in the as-grown crystal. The ferroelectric and dielectric properties were studied and the high Curie Temperature was determined to be 562 °C. Domain structure of K 0.5 Bi 4.5 Ti 4 O 15  crystal was investigated by piezoresponse force microscopy (PFM) through ±3 V dc bias. The clear dark and bright contrast in the PFM images indicates the domain switching.

Ferroelectric and domain characterization of K 0.5 Bi 4.5 Ti 4 O 15 crystal