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In this paper, the ferroelectric (FE) properties of 20-nm-thick Hf 0.5 Zr 0.5 O 2  films deposited by an atomic layer deposition technique by using O 3  or H 2 O as an oxygen source were studied. For both oxygen source, the Hf 0.5 Zr 0.5 O 2  films exhibited the formation of a non-centrosymmetric orthorhombic phase, which was responsible for the FE behavior. However, it was shown that the H 2 O-based Hf 0.5 Zr 0.5 O 2  films were more unsuitable for hydrogen from H 2 O than the O 3 -based Hf 0.5 Zr 0.5 O 2  films, which reduced the FE polarization and increased the leakage behavior. The results indicated that the use of O 3  as an oxygen source in the ALD process has potential for the fabrication of FE Hf 0.5 Zr 0.5 O 2  films for next generation memory applications.

Effect of H 2 O and O 3 as the oxygen sources on the atomic layer deposition of ferroelectric Hf 0.5 Zr 0.5 O 2 film