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Thin films of lead zirconate titanate were formed by plasma radiofrequency sputtering on a low-resistance silicon substrate. The properties of the films were studied by X-ray phase analysis, scanning electron microscopy, atomic force microscopy and, piezoresponse force microscopy. The domain structure was determined by the morphology of the film surface, which had a high surface potential having an average value of +10 V. The average value of the piezoelectric modulus was 15.5 ÷ 17.9 pC/V, and the magnitude of the coercive field was (3.05 ± 0.25)·10 5  V/cm. The formed PZT films can be used to manufacture the energy harvesters.

Study of the properties of a PZT thin film formed on a highly doped silicon substrate