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This work presents the results of a comparative study of dielectric and pyroelectric properties of aluminum nitride (AlN) single-layer and multilayer samples with a thickness of 100 ÷ 200 μm grown in the [0001] direction by chloride-hydride epitaxy. A silicon wafer covered by silicon carbide nanolayer grown by solid-phase substitution (SiC/(111)Si) was used as a substrate for subsequent growth of AlN single crystalline layers. The samples were formed by layer-by-layer growth. It is shown that such method makes it possible to change the orientation of the polar hexagonal axis in AlN single crystals.

Dielectric and pyroelectric properties of AlN single-crystal layers grown by chloride-hydride epitaxy