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The Rietveld analysis of X-ray diffraction spectrum confirms the tetragonal ( P4bm ) symmetry of the manganese doped Bi 0.5 K 0.5 TiO 3  (BKT) compound synthesized by the solid-state reaction route. The dielectric analysis of doping of 5% manganese (Mn) ions at the Ti-sites in the host BKT is analyzed on the basis of the Maxwell–Wagner mechanism in the material. The P-E loop indicates the ferroelectric nature of the compound. Correlated barrier hopping is found to be the dominant conduction mechanism in the compound. The leakage current confirms the negative temperature coefficient of resistance nature of the compound and the Ohmic electrode contact. The substitutions of smaller Mn ion with multiple valencies at the Ti site enhances the dielectric constant substantially, decreases the loss tangent, and lower the leakage current. These features are applicable for energy storage devices, memory devices, high-temperature sensors, and high-temperature capacitors.

Structural and electrical characteristics of manganese modified Bi 0.5 K 0.5 TiO 3 ceramic