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We have successfully deposited lithium niobate thin films on a  p -type silicon substrate (100) using Chemical Solution Deposition (CSD) method and spin coating technique. The lithium niobate thin films were doped with Lanthanum with a molarity variation of 1   M, 2   M, 3   M, and 4   M and concentration variation of 0%, 2%, 4%, and 6% on 2   M solubility. Using reflectance data, we found that the energy gap of the niobite thin film at 1   M, 2   M, 3   M, and 4   M solubility are 1.36   eV, 2.79   eV, 2.38   eV, and 1.75   eV, respectively. Meanwhile, lanthanum doped lithium with concentration of 0%, 2%, 4%, and 6% yield an energy gap of 2.75   eV, 3.19   eV, 3.21   eV, and 2.45   eV, respectively. X-ray measurement on Lithium Niobate thin films show a rhombohedral structure with lattice parameter  a  =  b  while the  c  parameter is different.

The structure and optical properties of lithium niobate thin film (LiNbO 3 ) grown on silicon for various lanthanum concentration and molarity