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Dirac fermions play a central role in the study of topological phases, forthey can generate a variety of exotic states, such as Weyl semimetals andtopological insulators. The control and manipulation of Dirac fermionsconstitute a fundamental step towards the realization of novel concepts ofelectronic devices and quantum computation. By means of ARPES experiments andab initio simulations, here we show that Dirac states can be effectively tunedby doping a transition metal sulfide, BaNiS2, through Co/Ni substitution. Thesymmetry and chemical characteristics of this material, combined with themodification of the charge transfer gap of BaCo_{1-x}Ni_{x}S_{2} across itsphase diagram, lead to the formation of Dirac lines whose position in k-spacecan be displaced along the Gamma M symmetry direction, and their form reshaped.Not only does the doping x tailor the location and shape of the Dirac bands,but it also controls the metal-insulator transition in the same compound,making BaCo_{1-x}Ni_{x}S_{2} a model system to functionalize Dirac materials byvarying the strength of electron correlations.

Tuning Dirac nodes with correlated d-electrons in BaCo_{1-x}Ni_{x}S_{2}