English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-basedsuperconductors with critical temperatures (Tc) ranging up to 32 K. Theirparent phases have unique properties when compared with other iron-basedsuperconductors; e.g., their crystal structures include ordered Fe vacancies,their normal states are antiferromagnetic (AFM) insulating phases, and theyhave extremely high N\'eel transition temperatures. However, control of carrierdoping into the parent AFM insulators has been difficult due to their intrinsicphase separation. Here, we fabricated an Fe-vacancy-ordered TlFe1.6Se2insulating epitaxial film with an atomically flat surface and examined itselectrostatic carrier doping using an electric double-layer transistor (EDLT)structure with an ionic liquid gate. The positive gate voltage gave conductancemodulation of three orders of magnitude at 25 K, and further induced andmanipulated a phase transition; i.e., delocalized carrier generation byelectrostatic doping is the origin of the phase transition. This is the firstdemonstration, to the authors' knowledge, of an EDLT using a Mott insulatoriron-selenide channel and opens a way to explore high-Tc superconductivity iniron-based layered materials, where carrier doping by conventional chemicalmeans is difficult.

Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2