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The impurity doping concentration of a semiconductor is commonly determined by measuring the C-V profile of a Schottky diode. In this work, an alternative method is utilised to determine the impurity doping density of a moderately acceptor-doped Schottky diode using infrared photoelectric measurements. Due to the image lowering effect, the barrier is lowered with the increasing field or reverse bias. Having determined the relationship between the reverse bias and the lowered barrier, the doping density and the zero bias barrier  eight from the infrared photo response measurements can be accurately determined.

Determination of Barrier Height and Doping Density of a Schottky Diode from Infrared Photoresponse Measurements