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Heusler alloys based magnetic tunnel junctions can potentially provide highmagnetoresistance, small damping and fast switching. Here junctions withCo2FeAl as a ferromagnetic electrode are fabricated by room temperaturesputtering on Si/SiO2 substrates. The doping of Boron in Co2FeAl is found tohave a large positive impact on the structural, magnetic and transportproperties of the junctions, with a reduced interfacial roughness andsubstantial improved tunneling magnetoresistance. A two-level magnetoresistanceis also observed in samples annealed at low temperature, which is believed tobe related to the memristive effect of the tunnel barrier with impurities.

Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl