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Utilizing an interplay between band topology and intrinsic magnetism, thetwo-dimensional van der Waals (vdW) system MnBi_2Te_4 provides an idealplatform for realizing exotic quantum phenomena and offers great opportunitiesin the emerging field of antiferromagnetic spintronic technology. Yet, thefabrication of MnBi_2Te_4-based nanodevices is hindered by the high sensitivityof this material, which quickly degrades when exposed to air or to elevatedtemperatures. Here, we demonstrate an alternative route of fabricatingvdW-MnBi_2Te_4-based electronic devices using the cryogenic dry transfer of aprintable circuit embedded in an inorganic silicon nitride membrane. Theelectrical connections between the thin crystal and the top surface of themembrane are established through via contacts. Our magnetotransport studyreveals that this innovative via contact approach enables exploring theMnBi_2Te_4-like sensitive 2D materials and engineering syntheticheterostructures as well as complex circuits based on the two-dimensional vdWsystems.

Hall-effect in the MnBi_2Te_4 crystal using silicon nitride nanomembrane via contacts