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Fluctuations of electric fields can change the position of a gate-definedquantum dot in a semiconductor heterostructure. In the presence of magneticfield gradient, these stochastic shifts of electron's wavefunction lead tofluctuations of electron's spin splitting. The resulting spin dephasing due tocharge noise limits the coherence times of spin qubits in isotopically purifiedSi/SiGe quantum dots. We investigate the spin splitting noise caused by suchprocess caused by microscopic motion of charges at the semiconductor-oxideinterface. We compare effects of isotropic and planar displacement of thecharges, and estimate their densities and typical displacement magnitudes thatcan reproduce experimentally observed spin splitting noise spectra. We predictthat for defect density of $10^{10}$ cm$^{-2}$, visible correlations betweennoises in spin splitting and in energy of electron's ground state in thequantum dot, are expected.

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot