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A major roadblock to scalable quantum computing is phase decoherence andenergy relaxation caused by qubits interacting with defect-related two-levelsystems (TLS). Native oxides present on the surfaces of superconducting metalsused in quantum devices are acknowledged to be a source of TLS that decreasequbit coherence times. Reducing microwave loss by surface engineering (i.e.,replacing uncontrolled native oxide of superconducting metals with a thin,stable surface with predictable characteristics) can be a key enabler forpushing performance forward with devices of higher quality factor. In thiswork, we present a novel approach to replace the native oxide of niobium(typically formed in an uncontrolled fashion when its pristine surface isexposed to air) with an engineered oxide, using a room-temperature process thatleverages Accelerated Neutral Atom Beam (ANAB) technology at 300 mm waferscale. This ANAB beam is composed of a mixture of argon and oxygen, withtunable energy per atom, which is rastered across the wafer surface. TheANAB-engineered Nb-oxide thickness was found to vary from 2 nm to 6 nmdepending on ANAB process parameters. Modeling of variable-energy XPS dataconfirm thickness and compositional control of the Nb surface oxide by the ANABprocess. These results correlate well with those from transmission electronmicroscopy and X-ray reflectometry. Since ANAB is broadly applicable tomaterial surfaces, the present study indicates its promise for modification ofthe surfaces of superconducting quantum circuits to achieve longer coherencetimes.

Engineering of Niobium Surfaces Through Accelerated Neutral Atom Beam Technology For Quantum Applications