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Due to presence of magnetic field gradient needed for coherent spin control,dephasing of single-electron spin qubits in silicon quantum dots is oftendominated by $1/f$ charge noise. We investigate theoretically fluctuations ofground state energy of an electron in gated quantum dot in realistic Si/SiGestructure. We assume that the charge noise is caused by motion of chargestrapped at the semiconductor-oxide interface. We consider a realistic range oftrapped charge densities, $\rho \! \sim \! 10^{10}$ cm$^{-2}$, and typicallenghtscales of isotropically distributed displacements of these charges,$\delta r \! \leq \! 1$ nm, and identify pairs $(\rho,\delta r)$ for which theamplitude and shape of the noise spectrum is in good agreement with spectrareconstructed in recent experiments on similar structures.

Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure