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Graphene's linear bandstructure and two-dimensional density of states providean implicit advantage for sensing charge. Here, these advantages are leveragedin a deeply depleted graphene-oxide-semiconductor (D2GOS) junction detectorarchitecture to sense carriers created by ionizing radiation. Specifically, theroom temperature response of the silicon-based D2GOS junction is analyzedduring irradiation with 20 MeV Si4+ ions. Detection was demonstrated for dosesranging from 12-1200 ions with device functionality maintained with nosubstantive degradation. To understand the device response, D2GOS pixels werecharacterized post-irradiation via a combination of electricalcharacterization, Raman spectroscopy, and photocurrent mapping. This combinedcharacterization methodology underscores the lack of discernible damage causedby irradiation to the graphene while highlighting the nature of interactionsbetween the incident ions and the silicon absorber.

Detection of High Energy Ionizing Radiation using Deeply Depleted Graphene-Oxide-Semiconductor Junctions