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Fully microscopic many-body models based on inputs from first principledensity functional theory are used to calculate the carrier losses due toradiative- and Auger-recombinations in bulk tellurium. It is shown that Augerprocesses dominate the losses for carrier densities in the range typical forapplications as lasers. The Auger loss depends crucially on the energeticposition of the $H_6$ valence bands. At cryogenic temperatures of 50$\,$K(100$\,$K) the Auger coefficient, $C$, varies by about six (three) orders ofmagnitude within the range of published distances between these bands and thevalence bandedge. Values for $C$ at the high and low end of these ranges arefound if the distance is smaller or larger than the bandgap, respectively. Atroom temperature the sensitivity is reduced to about a factor of four with $C$values ranging between $0.4$ and $1.6\times 10^{-27}$cm$^6$s$^{-1}$. Here,radiative losses dominate for carrier densities up to about $10^{16}/$cm$^3$with a loss coefficient $B\approx 10^{-11}$cm$^3$s$^{-1}$. The radiative lossesare about two to three times lower than in typical bulk III-V materials forcomparable wavelengths.

Intrinsic Carrier Losses in Tellurium Due to Radiative and Auger Recombinations