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Localized residual stress and elastic strain concentrations inmicroelectronic devices often affect the electronic performance, resistance tothermomechanical damage, and, likely, radiation tolerance. A primary challengefor characterization of these concentrations is that they exist over sub-$\mu$mlength-scales, precluding their characterization by more traditional residualstress measurement techniques. Here we demonstrate the use of synchrotron X-ray-based differential aperture X-ray microscopy (DAXM) as a viable,non-destructive means to characterize these stress and strain concentrations ina depth-resolved manner. DAXM is used to map two-dimensional strain fieldsbetween source and drain in a gallium nitride (GaN) layer within high electronmobility transistors (HEMTs) with sub-$\mu$m spatial resolution. Strain fieldsat various positions in both pristine and irradiated HEMT specimens arepresented in addition to a preliminary stress analysis to estimate thedistribution of various stress components within the GaN layer.$\gamma$-irradiation is found to significantly reduce the lattice plane spacingin the GaN along the sample normal direction which is attributed to radiationdamage in transistor components bonded to the GaN during irradiation.

journal of applied physics

Non-destructive Depth-Resolved Characterization of Residual Strain  Fields in High Electron Mobility Transistors using Differential Aperture  X-ray Microscopy