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All van der Waals (vdW) Fe3GeTe2/Cr2Ge2Te6/graphite magnetic heterojunctionshave been fabricated via mechanical exfoliation and stacking, and theirmagnetotransport properties are studied in detail. At low bias voltages largenegative junction magnetoresistances have been observed and are attributed tospin-conserving tunneling transport across the insulating Cr2Ge2Te6 layer. Withincreasing bias, a crossover to Fowler-Nordheim tunneling takes place. Thenegative sign of the tunneling magnetoresistance (TMR) suggests that the bottomof conduction band in Cr2Ge2Te6 belongs to minority spins, opposite to thefindings of some first-principles calculations. This work shows that the vdWheterostructures based on 2D magnetic insulators are a valuable platform togain further insight into spin polarized tunneling transport, which is thebasis for pursuing high performance spintronic devices and a large variety ofquantum phenomena.

Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6