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Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum welllasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nmthick GaAs epilayer completely free of antiphase domains was initially grown onthe silicon substrate in a metal-organic chemical vapor deposition system andthe other epilayers including four sets of five-period strained-layersuperlattices and the laser-structural layers were successively grown in amolecular beam epitaxy system. The lasers were prepared as broad-stripeFabry-Perot ones with a stripe width of 21.5 um and a cavity length of 1 mm.Typically, the threshold current and the corresponding threshold currentdensity are 186.4 mA and 867 A/cm2, respectively. The lasing wavelength isaround 980 nm and the slope efficiency is 0.097 W/A with a single-facet outputpower of 22.5 mW at an injection current of 400 mA. This advancement makes thesilicon-based monolithic optoelectronic integration relevant to quantum welllasers more promising with an enhanced feasibility.

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)