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4d transition metal oxides have emerged as promising materials for numerousapplications including high mobility electronics. SrNbO$_{3}$ is one suchcandidate material, serving as a good donor material in interfacial oxidesystems and exhibiting high electron mobility in ultrathin films. However, itssynthesis is challenging due to the metastable nature of the d$^{1}$ Nb$^{4+}$cation and the limitations in the delivery of refractory Nb. To date, filmshave been grown primarily by pulsed laser deposition (PLD), but development ofa means to grow and stabilize the material via molecular beam epitaxy (MBE)would enable studies of interfacial phenomena and multilayer structures thatmay be challenging by PLD. To that end, SrNbO$_{3}$ thin films were grown usinghybrid MBE for the first time using a tris(diethalamido)(tert-butylimido)niobium precursor for Nb and an elemental Sr source on GdScO$_{3}$ substrates.Varying thicknesses of insulating SrHfO$_{3}$ capping layers were depositedusing a hafnium tert-butoxide precursor for Hf on top of SrNbO$_{3}$ films topreserve the metastable surface. Grown films were transferred in vacuo forX-ray photoelectron spectroscopy to quantify elemental composition, density ofstates at the Fermi energy, and Nb oxidation state. Ex situ studies by X-rayabsorption near edge spectra illustrates the SrHfO$_{3}$ capping plays animportant role in preserving the Nb 4d$^{1}$ metastable charge state inatmospheric conditions.

Surface Stability of SrNbO$_{3+{\delta}}$ Grown by Hybrid Molecular Beam Epitaxy