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We present a micro-mechanical terahertz (THz) detector fabricated on asilicon on insulator (SOI) substrate and operating at room-temperature. Thedevice is based on a U-shaped cantilever of micrometric size, on top of whichtwo aluminum half-wave dipole antennas are deposited. This produces anabsorption extending over the $\sim 2-3.5$THz frequency range. Due to thedifferent thermal expansion coefficients of silicon and aluminum, the absorbedradiation induces a deformation of the cantilever, which is read out opticallyusing a $1.5\mu$m laser diode. By illuminating the detector with an amplitudemodulated, 2.5 THz quantum cascade laser, we obtain, at room-temperature andatmospheric pressure, a responsivity of $\sim 1.5 \times 10^{8}$pm/W for thefundamental mechanical bending mode of the cantilever. This yields annoise-equivalent-power of 20 nW/Hz$^{1/2}$ at 2.5THz. Finally, the lowmechanical quality factor of the mode grants a broad frequency response ofapproximately 150kHz bandwidth, with a response time of $\sim 2.5\mu$s.

SOI-based micro-mechanical terahertz detector operating at room-temperature