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The nuclear spins of low-density implanted Ga atoms in Ge are interestingcandidates for solid state-based qubits. To date, activation studies ofimplanted Ga in Ge have focused on high densities. Here we extend activationstudies into the low-density regime. We use spreading resistance profiling andsecondary ion mass spectrometry to derive electrical activation of Ga ionsimplanted into Ge as a function of rapid thermal anneal temperature and implantdensity. We show that for our implant conditions the activation is best foranneal temperatures between 400 and 650 $^\circ$C, with a maximum activation of64% at the highest fluence. Below 400 $^\circ$C, remaining implant damageresults in defects that act as superfluous carriers, and above 650 $^\circ$C,surface roughening and loss of Ga ions are observed. The activation increasedmonotonically from 10% to 64% as the implant fluence increased from$6\times10^{10}$ to $6\times10^{12}$ cm$^{-2}$. The results provide thermalanneal conditions to be used for initial studies of using low-density Ga atomsin Ge as nuclear spin qubits.

Thermal activation of low-density Ga implanted in Ge