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We report a high-responsive hot-electron photodetector based on theintegration of an Au-MoS$_2$ junction with a silicon nitride microringresonator (MRR) for detecting telecom-band light. The coupling of theevanescent field of the silicon nitride MRR with the Au-MoS$_2$ Schottkyjunction region enhances the hot-electron injection efficiency. The deviceexhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, andthe moderately uniform responsivities are obtained over the wavelength range of1500 nm-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offerspossibilities for integrated optoelectronic systems.

High-responsivity MoS$_2$ hot-electron telecom-band photodetector integrated with microring resonator