English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We characterize heat dissipation of supported molybdenum disulfide (MoS$_2$)monolayers grown by chemical vapor deposition by means of ambient-conditionscanning thermal microscopy (SThM). We find that the thermal boundaryconductance of the MoS$_2$ monolayers in contact with 300 nm of SiO$_2$ isaround 4.6 $\pm$ 2 MW m$^{-2}$ K$^{-1}$. This value is in the low range of thevalues determined for exfoliated flakes with other techniques such as Ramanthermometry, which span an order of magnitude (0.44-50 MW m$^{-2}$ K$^{-1}$),and underlines the dispersion of measurements. The sensitivity to the in-planethermal conductivity of supported MoS$_2$ is very low, highlighting that thethermal boundary conductance is the key driver of heat dissipation for theMoS$_2$ monolayer when it is not suspended. In addition, this work alsodemonstrates that SThM calibration using different thicknesses of SiO$_2$,initially aimed at being used with bulk materials can be extended to 2Dmaterials.

Thermal boundary conductance of CVD-grown MoS$_2$ monolayer-on-silica substrate determined by scanning thermal microscopy