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Wide and ultrawide-bandgap semiconductors lie at the heart of next-generationhigh-power, high-frequency electronics. Here, we report the growth ofultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride(GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level andvalence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizationsconfirm the growth of BN thin films on GaN. Optically, we observed that BN/GaNheterostructure is second-harmonic generation active. Moreover, we fabricatedthe BN/GaN heterostructure-based Schottky diode that demonstrates rectifyingcharacteristics, lower turn-on voltage, and an improved breakdown capability(234 V) as compared to GaN (168 V), owing to the higher breakdown electricalfield of BN. Our approach is an early step towards bridging the gap betweenwide and ultrawide-bandgap materials for potential optoelectronics as well asnext-generation high-power electronics.

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition